Effect of boron doping on luminescence properties of GdAlO3 (GAP) phosphors

EGE A., Kutluel Y., DURUKAN GÜLTEPE M., Kaynar U.

Indian Journal of Physics, 2026 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Basım Tarihi: 2026
  • Doi Numarası: 10.1007/s12648-025-03911-7
  • Dergi Adı: Indian Journal of Physics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, INSPEC, zbMATH
  • Anahtar Kelimeler: Boron, Gadolinium aluminate phosphors (GAP), Photoluminescence, Terbium, Thermoluminescence, UV
  • Manisa Celal Bayar Üniversitesi Adresli: Evet

Özet

In this study, a microwave-assisted combustion technique was used to create gadolinium aluminate phosphors (GAP), gadolinium aluminate phosphors doped with terbium (GAP: Tb), and gadolinium aluminate phosphors doped with boron (GAP: Tb, B). The structural properties of the phosphors were investigated using X-ray diffraction (XRD) analysis. The photoluminescence (PL) emission and excitation spectra of GAP: Tb and GAP: Tb, B phosphors were studied. In this study, the luminescence properties of Tb-doped GAP materials were examined by considering the contributions of the boron ions. As a result, it was determined that the photoluminescence intensity increased with boron doping in GAP: Tb. The thermoluminescence (TL) properties of the phosphors were also examined. The impact of Tb (terbium) and B (boron) doping on the thermoluminescence features of GAP materials was investigated by analyzing thermoluminescence glow curves after irradiation with 365, 302, and 254 nm ultraviolet (UV) radiation.