Research Information System
Journal of Electronic Materials, vol.53, no.10, pp.6536-6552, 2024 (SCI-Expanded, Scopus)
The effect of boron doping on dielectric properties was examined using β-SrTa2O6:xEu3+ (x = 1.5 mol%, 3 mol%, 5 mol%, 10 mol%), β-SrTa2O6:xEu3+, yB3+ (x = 1.5 mol%, 3 mol%, 5 mol%, 10 mol%, y = 10 mol%) and BaTa2O6:xEu3+, yB3+ (x = 10 mol%, y = 0 mol%, 5 mol%, 15 mol%, 30 mol%, 50 mol%, 70 mol%, 100 mol%) tungsten bronze ceramics produced by the solid-state reaction method. X-ray diffraction (XRD ) results of all the β-SrTa2O6 and BaTa2O6 samples showed that they retained a single-phase structure. In scanning electron microscopy (SEM) examinations, the presence of boron promoted grain growth and agglomeration in the β-SrTa2O6 grains, while the increased boron concentration led to grain elongation in addition to grain growth in the BaTa2O6 grains. The dielectric results for the β-SrTa2O6:xEu3+ and β-SrTa2O6:xEu3+, yB3+ series showed that increased Eu3+ caused a decrease in the dielectric constant (ε′) and dielectric loss (tan δ), whereas the increasing B3+ presence for the BaTa2O6:xEu3+, yB3+ series led to an increase in the dielectric constant and a decrease in dielectric loss. The increase in tetragonality for BaTa2O6:xEu3+, yB3+ ceramics was correlated with a higher ferroelectric Curie temperature.